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ChinaBSB104N08NP3GXUSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSB104N08NP3GXUSA1
BESCHREIBUNG
MOSFET N-CH 80V 13A/50A 2WDSON
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 13A (Ta), 50A (Tc) 2.8W (Ta), 42W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2, CanPAK M™
Package / Case
3-WDSON
Base Product Number
BSB104
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001164330
448-BSB104N08NP3GXUSA1TR
BSB104N08NP3GXUSA1-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSB104N08NP3GXUSA1
Dokumente und Medien
Datasheets
1(BSB104N08NP3G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSB104N08NP3G)
Simulation Models
1(MOSFET OptiMOS™ 80V N-Channel Spice Model)
Menge Preis
QUANTITÄT: 10000
Einzelpreis: $0.62006
Verpackung: Tape & Reel (TR)
MinMultiplikator: 5000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 5000
QUANTITÄT: 5000
Einzelpreis: $0.65007
Verpackung: Tape & Reel (TR)
MinMultiplikator: 5000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 5000
Stellvertreter
-