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ChinaNGTD17T65F2WP
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TEILNUMMER DES HERSTELLERS
NGTD17T65F2WP
BESCHREIBUNG
IGBT TRENCH FIELD STOP 650V DIE
DETAILIERTE BESCHREIBUNG
IGBT Trench Field Stop 650 V Surface Mount Die
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector Pulsed (Icm)
160 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 40A
Switching Energy
-
Input Type
Standard
Td (on/off) @ 25°C
-
Test Condition
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Base Product Number
NGTD17
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/onsemi NGTD17T65F2WP
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Menge Preis
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