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TEILNUMMER DES HERSTELLERS
2SD1695-AZ
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 35 V 2 A 1.3 W Through Hole TO-126
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
111
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
35 V
Vce Saturation (Max) @ Ib, Ic
1.2V @ 1mA, 1A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A, 2V
Power - Max
1.3 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNS2SD1695-AZ
2156-2SD1695-AZ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SD1695-AZ
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 111
Einzelpreis: $2.7
Verpackung: Bulk
MinMultiplikator: 111
Verpackung: Bulk
MinMultiplikator: 111
Stellvertreter
-