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ChinaPBSS4160PANPS115
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TEILNUMMER DES HERSTELLERS
PBSS4160PANPS115
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 125MHz 370mW Surface Mount DFN2020D-6
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,112
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
1A
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
220mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
290 @ 100mA, 2V
Power - Max
370mW
Frequency - Transition
175MHz, 125MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
6-UDFN Exposed Pad
Supplier Device Package
DFN2020D-6
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
NEXNXPPBSS4160PANPS115
2156-PBSS4160PANPS115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/NXP USA Inc. PBSS4160PANPS115
Dokumente und Medien
Datasheets
1(PBSS4160PANPS)
HTML Datasheet
1(PBSS4160PANPS)
Menge Preis
-
Stellvertreter
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