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ChinaFCPF9N60NT
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FCPF9N60NT
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 9
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 9A (Tc) 29.8W (Tc) Through Hole TO-220F-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
217
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
SuperMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
385mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1240 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
29.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FCPF9N60NT
ONSONSFCPF9N60NT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCPF9N60NT
Dokumente und Medien
Datasheets
1(FCPF9N60NT Datasheet)
Menge Preis
QUANTITÄT: 217
Einzelpreis: $1.38
Verpackung: Bulk
MinMultiplikator: 217
Verpackung: Bulk
MinMultiplikator: 217
Stellvertreter
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