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China2N6668 TIN/LEAD
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TEILNUMMER DES HERSTELLERS
2N6668 TIN/LEAD
BESCHREIBUNG
TRANS PNP DARL 80V 10A TO220-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP - Darlington 80 V 10 A 20MHz 65 W Through Hole TO-220-3
HERSTELLER
Central Semiconductor Corp
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Central Semiconductor Corp
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
65 W
Frequency - Transition
20MHz
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2N6668CS-ND
2N6668CS
1514-2N6668TIN/LEAD
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Central Semiconductor Corp 2N6668 TIN/LEAD
Dokumente und Medien
Datasheets
1(Power Transistors TO-220 Case)
Environmental Information
1(RoHS Cert)
PCN Obsolescence/ EOL
1(EOL 2-10-23)
Menge Preis
-
Stellvertreter
-