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ChinaTIP29G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TIP29G
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 40 V 1 A 3MHz 2 W Through Hole TO-220-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
807
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 125mA, 1A
Current - Collector Cutoff (Max)
300µA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA, 4V
Power - Max
2 W
Frequency - Transition
3MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSTIP29G
2156-TIP29G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi TIP29G
Dokumente und Medien
Datasheets
1(TIP29BG Datasheet)
Menge Preis
QUANTITÄT: 807
Einzelpreis: $0.37
Verpackung: Bulk
MinMultiplikator: 807
Verpackung: Bulk
MinMultiplikator: 807
Stellvertreter
-