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ChinaIPI60R385CPXKSA1
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TEILNUMMER DES HERSTELLERS
IPI60R385CPXKSA1
BESCHREIBUNG
MOSFET N-CH 650V 9A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 9A (Tc) 83W (Tc) Through Hole PG-TO262-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI60R
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPI60R385CPAKSA1
INFINFIPI60R385CPXKSA1
2156-IPI60R385CPXKSA1-IT
SP000103250
IPI60R385CPXK
IPI60R385CP
IPI60R385CP-ND
IPI60R385CPX
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI60R385CPXKSA1
Dokumente und Medien
Datasheets
1(IPI60R385CP)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Power Factor Correction)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPI60R385CP)
Simulation Models
1(CoolMOS™ Power MOSFET 600V CP Spice Model)
Menge Preis
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