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ChinaHN4A56JU(TE85L,F)
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TEILNUMMER DES HERSTELLERS
HN4A56JU(TE85L,F)
BESCHREIBUNG
TRANS 2 PNP 50V 150MA 5TSSOP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 60MHz 200mW Surface Mount USV
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
HN4A56JU(TE85L,F) Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
2 PNP (Dual)
Current - Collector (Ic) (Max)
150mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA, 6V
Power - Max
200mW
Frequency - Transition
60MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
5-TSSOP, SC-70-5, SOT-353
Supplier Device Package
USV
Base Product Number
HN4A56
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
HN4A56JU(TE85LF)TR
HN4A56JU(TE85LF)DKR
HN4A56JU(TE85LF)CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Toshiba Semiconductor and Storage HN4A56JU(TE85L,F)
Dokumente und Medien
EDA Models
1(HN4A56JU(TE85L,F) Models)
Menge Preis
-
Stellvertreter
-