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ChinaUPA1476H-AZ
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
UPA1476H-AZ
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 115V 2A 3.5W Through Hole 10-SIP
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
130
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
4 NPN Darlington (Quad)
Current - Collector (Ic) (Max)
2A
Voltage - Collector Emitter Breakdown (Max)
115V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A, 2V
Power - Max
3.5W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
10-SIP
Supplier Device Package
10-SIP
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNSUPA1476H-AZ
2156-UPA1476H-AZ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Renesas Electronics Corporation UPA1476H-AZ
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 130
Einzelpreis: $2.31
Verpackung: Bulk
MinMultiplikator: 130
Verpackung: Bulk
MinMultiplikator: 130
Stellvertreter
-