Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRFR210
BESCHREIBUNG
MOSFET N-CH 200V 2.6A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount DPAK
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75

Technische Daten

Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
-
Base Product Number
IRFR210

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFR210

Dokumente und Medien

Datasheets
1(IRFR,IRFU,SiHFR,SiHFU_210)
HTML Datasheet
1(IRFR,IRFU,SiHFR,SiHFU_210)

Menge Preis

-

Stellvertreter

Teil Nr. : IRFR210PBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 14,031
Einzelpreis. : $37.00000
Ersatztyp. : Parametric Equivalent