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ChinaIRFBC20STRR
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFBC20STRR
BESCHREIBUNG
MOSFET N-CH 600V 2.2A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 2.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.4Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRFBC20
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFBC20STRR
Dokumente und Medien
Datasheets
1(IRFBC20S,L, SiHFBC20S,L)
HTML Datasheet
1(IRFBC20S,L, SiHFBC20S,L)
Menge Preis
-
Stellvertreter
Teil Nr. : IRFBC20STRLPBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 416
Einzelpreis. : $2.80000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 416
Einzelpreis. : $2.80000
Ersatztyp. : Parametric Equivalent