Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPW65R041CFD7XKSA1
BESCHREIBUNG
650V FET COOLMOS TO247
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 50A (Tc) 227W (Tc) Through Hole PG-TO247-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
20 Weeks
EDACAD-MODELL
IPW65R041CFD7XKSA1 Models
STANDARDPAKET
30

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™ CFD7
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4975 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
IPW65R041

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

448-IPW65R041CFD7XKSA1
SP005413359

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPW65R041CFD7XKSA1

Dokumente und Medien

Datasheets
1(IPW65R041CFD7)
Environmental Information
1(RoHS Certificate)
Featured Product
1(650 V CoolMOS™ CFD7 Superjunction MOSFETs)
EDA Models
1(IPW65R041CFD7XKSA1 Models)

Menge Preis

QUANTITÄT: 1020
Einzelpreis: $5.76965
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 510
Einzelpreis: $6.41073
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $7.2655
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $8.12033
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $10.17
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

-