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China2SK2729-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SK2729-E
BESCHREIBUNG
MOSFET N-CH 500V 20A TO3P
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 20A (Ta) 150W (Ta) Through Hole TO-3P
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
58
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Rds On (Max) @ Id, Vgs
290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
150W (Ta)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
RENRNS2SK2729-E
2156-2SK2729-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation 2SK2729-E
Dokumente und Medien
Datasheets
1(2SK2729-E)
Menge Preis
QUANTITÄT: 58
Einzelpreis: $5.18
Verpackung: Bulk
MinMultiplikator: 58
Verpackung: Bulk
MinMultiplikator: 58
Stellvertreter
-