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ChinaIPB50N12S3L15ATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPB50N12S3L15ATMA1
BESCHREIBUNG
MOSFET N-CHANNEL_100+
DETAILIERTE BESCHREIBUNG
N-Channel 120 V 50A (Tc) 100W (Tc) Surface Mount PG-TO263-3-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
15.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB50N12
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFIPB50N12S3L15ATMA1
SP001398602
2156-IPB50N12S3L15ATMA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB50N12S3L15ATMA1
Dokumente und Medien
Datasheets
1(IPx50N12S3L-15)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(IPx50N12S3L-15)
Menge Preis
-
Stellvertreter
Teil Nr. : IXFA110N15T2-TRL
Hersteller. : IXYS
Verfügbare Menge. : 0
Einzelpreis. : $3.97003
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $3.97003
Ersatztyp. : Similar