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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SB1150-AZ
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR, PNP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP - Darlington 70 V 3 A 1.3 W Through Hole TO-126
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
406
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
70 V
Vce Saturation (Max) @ Ib, Ic
1.2V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1.5A, 2V
Power - Max
1.3 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNS2SB1150-AZ
2156-2SB1150-AZ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB1150-AZ
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 406
Einzelpreis: $0.74
Verpackung: Bulk
MinMultiplikator: 406
Verpackung: Bulk
MinMultiplikator: 406
Stellvertreter
-