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China71V25761S200BG8
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
71V25761S200BG8
BESCHREIBUNG
IC SRAM 4.5MBIT PAR 119PBGA
DETAILIERTE BESCHREIBUNG
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Active
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Synchronous, SDR
Memory Size
4.5Mbit
Memory Organization
128K x 36
Memory Interface
Parallel
Clock Frequency
200 MHz
Write Cycle Time - Word, Page
-
Access Time
3.1 ns
Voltage - Supply
3.135V ~ 3.465V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Surface Mount
Package / Case
119-BGA
Supplier Device Package
119-PBGA (14x22)
Base Product Number
71V25761
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Andere Namen
IDT71V25761S200BG8-ND
IDT71V25761S200BG8
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Renesas Electronics Corporation 71V25761S200BG8
Dokumente und Medien
Datasheets
()
PCN Design/Specification
1(PBGA Substrate 21-May-2022)
PCN Packaging
1(All Dev Label Chg 1/Dec/2022)
HTML Datasheet
()
Menge Preis
-
Stellvertreter
-