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ChinaSI7792DP-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI7792DP-T1-GE3
BESCHREIBUNG
MOSFET N-CH 30V 40.6A/60A PPAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 40.6A (Ta), 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
SkyFET®, TrenchFET® Gen III
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
40.6A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4735 pF @ 15 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SI7792
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI7792DP-T1-GE3
Dokumente und Medien
Datasheets
1(SI7792DP)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SI7792DP)
Menge Preis
-
Stellvertreter
Teil Nr. : SIRC10DP-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 5,967
Einzelpreis. : $0.84000
Ersatztyp. : Similar
Verfügbare Menge. : 5,967
Einzelpreis. : $0.84000
Ersatztyp. : Similar