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ChinaIRL3715SPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRL3715SPBF
BESCHREIBUNG
MOSFET N-CH 20V 54A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 54A (Tc) 3.8W (Ta), 71W (Tc) Surface Mount D2PAK
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
*IRL3715SPBF
SP001567086
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL3715SPBF
Dokumente und Medien
Datasheets
1(IRL3715(S,L)PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL3715(S,L)PbF)
Menge Preis
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Stellvertreter
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