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ChinaFDFME3N311ZT
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDFME3N311ZT
BESCHREIBUNG
MOSFET N-CH 30V 1.8A 6MICROFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 1.8A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
PowerTrench®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
299mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.4 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
75 pF @ 15 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-MicroFET (1.6x1.6)
Package / Case
6-UFDFN Exposed Pad
Base Product Number
FDFME3
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FDFME3N311ZT-ND
FDFME3N311ZTTR
FDFME3N311ZTCT
FDFME3N311ZTDKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDFME3N311ZT
Dokumente und Medien
Datasheets
1(FDFME3N311ZT)
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
()
Featured Product
1(ON Semiconductor - 30 V to 60 V Trench6 N-Channel MOSFET)
PCN Obsolescence/ EOL
1(Mult Devices EOL 126/Jul/2018)
PCN Design/Specification
()
PCN Packaging
()
Menge Preis
-
Stellvertreter
Teil Nr. : SSM6H19NU,LF
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 57,777
Einzelpreis. : $0.36000
Ersatztyp. : Similar
Verfügbare Menge. : 57,777
Einzelpreis. : $0.36000
Ersatztyp. : Similar