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China2SB827R
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SB827R
BESCHREIBUNG
PNP SILICON TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 50 V 7 A 10MHz 60 W Through Hole TO-3PB
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
272
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
7 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 400mA, 4A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 2V
Power - Max
60 W
Frequency - Transition
10MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PB
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONS2SB827R
2156-2SB827R
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB827R
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 273
Einzelpreis: $1.1
Verpackung: Bulk
MinMultiplikator: 273
Verpackung: Bulk
MinMultiplikator: 273
Stellvertreter
-