Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SI5458DU-T1-GE3
BESCHREIBUNG
MOSFET N-CH 30V 6A CHIPFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 6A (Tc) 3.5W (Ta), 10.4W (Tc) Surface Mount PowerPAK® ChipFET™ Single
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
14 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
41mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
325 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 10.4W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® ChipFET™ Single
Package / Case
PowerPAK® ChipFET™ Single
Base Product Number
SI5458

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SI5458DUT1GE3
SI5458DU-T1-GE3DKR
SI5458DU-T1-GE3TR
SI5458DU-T1-GE3CT

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI5458DU-T1-GE3

Dokumente und Medien

Datasheets
1(SI5458DU)
PCN Assembly/Origin
1(Manufacturing Capacity Expansion 27/Jul/2023)
HTML Datasheet
1(SI5458DU)

Menge Preis

QUANTITÄT: 30000
Einzelpreis: $0.1875
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
QUANTITÄT: 9000
Einzelpreis: $0.18938
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
QUANTITÄT: 6000
Einzelpreis: $0.20453
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
QUANTITÄT: 3000
Einzelpreis: $0.21589
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000

Stellvertreter

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