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ChinaIRFD9010
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFD9010
BESCHREIBUNG
MOSFET P-CH 50V 1.1A 4DIP
DETAILIERTE BESCHREIBUNG
P-Channel 50 V 1.1A (Tc) 1W (Tc) Through Hole 4-HVMDIP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
IRFD9010 Models
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
500mOhm @ 580mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Base Product Number
IRFD9010
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFD9010
Dokumente und Medien
Datasheets
1(IRFD9010, SiHFD9010)
HTML Datasheet
1(IRFD9010, SiHFD9010)
EDA Models
1(IRFD9010 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : IRFD9010PBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 1,901
Einzelpreis. : $1.33000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 1,901
Einzelpreis. : $1.33000
Ersatztyp. : Parametric Equivalent