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ChinaIRF7353D2TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF7353D2TRPBF
BESCHREIBUNG
MOSFET N-CH 30V 6.5A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 6.5A (Ta) 2W (Ta) Surface Mount 8-SO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
FETKY™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
29mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 25 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF7353D2TRPBFTR-ND
IRF7353D2PBFDKR
SP001566318
IRF7353D2TRPBF-ND
IRF7353D2PBFCT
IRF7353D2PBFTR
*IRF7353D2TRPBF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7353D2TRPBF
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