English
Spain
Rusia
Italy
ChinaFQPF4N20
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQPF4N20
BESCHREIBUNG
MOSFET N-CH 200V 2.8A TO220F
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 2.8A (Tc) 27W (Tc) Through Hole TO-220F-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,025
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
220 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
27W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQPF4N20-FS
FAIFSCFQPF4N20
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF4N20
Dokumente und Medien
Datasheets
1(FQPF4N20)
Menge Preis
QUANTITÄT: 1025
Einzelpreis: $0.29
Verpackung: Tube
MinMultiplikator: 1025
Verpackung: Tube
MinMultiplikator: 1025
Stellvertreter
-