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TEILNUMMER DES HERSTELLERS
BC857BWE6327
BESCHREIBUNG
BIPOLAR GEN PURPOSE TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
45 V
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA, 5V
Power - Max
250 mW
Frequency - Transition
250MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
PG-SOT323
Base Product Number
BC857
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-BC857BWE6327
INFINFBC857BWE6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Infineon Technologies BC857BWE6327
Dokumente und Medien
Datasheets
1(BC858BWH6327XTSA1)
Menge Preis
QUANTITÄT: 15000
Einzelpreis: $0.02
Verpackung: Bulk
MinMultiplikator: 15000
Verpackung: Bulk
MinMultiplikator: 15000
Stellvertreter
-