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ChinaSI5975DC-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI5975DC-T1-GE3
BESCHREIBUNG
MOSFET 2P-CH 12V 3.1A 1206-8
DETAILIERTE BESCHREIBUNG
Mosfet Array 12V 3.1A 1.1W Surface Mount 1206-8 ChipFET™
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
3.1A
Rds On (Max) @ Id, Vgs
86mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs
9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™
Base Product Number
SI5975
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI5975DC-T1-GE3
Dokumente und Medien
Datasheets
1(SI5975DC)
Environmental Information
()
HTML Datasheet
1(SI5975DC)
Menge Preis
-
Stellvertreter
Teil Nr. : SI5935CDC-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 2,900
Einzelpreis. : $0.53000
Ersatztyp. : Direct
Verfügbare Menge. : 2,900
Einzelpreis. : $0.53000
Ersatztyp. : Direct