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ChinaIXFP4N100P
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFP4N100P
BESCHREIBUNG
MOSFET N-CH 1000V 4A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 1000 V 4A (Tc) 150W (Tc) Through Hole TO-220-3
HERSTELLER
IXYS
STANDARD LEADTIME
98 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™, Polar
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1456 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
IXFP4N100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFP4N100P
Dokumente und Medien
Datasheets
1(IXF(A,P)4N100P)
Environmental Information
1(Ixys IC REACH)
Menge Preis
QUANTITÄT: 300
Einzelpreis: $2.55643
Verpackung: Tube
MinMultiplikator: 300
Verpackung: Tube
MinMultiplikator: 300
Stellvertreter
Teil Nr. : STP5NK100Z
Hersteller. : STMicroelectronics
Verfügbare Menge. : 2,999
Einzelpreis. : $3.98000
Ersatztyp. : Similar
Verfügbare Menge. : 2,999
Einzelpreis. : $3.98000
Ersatztyp. : Similar