Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
GC10MPS12-252
BESCHREIBUNG
DIODE SIL CARB 1.2KV 50A TO252-2
DETAILIERTE BESCHREIBUNG
Diode 1200 V 50A Surface Mount TO-252-2
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10,000

Technische Daten

Mfr
GeneSiC Semiconductor
Series
SiC Schottky MPS™
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
50A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
10 µA @ 1200 V
Capacitance @ Vr, F
660pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
TO-252-2
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
GC10MPS12

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080

Andere Namen

1242-1332-6
1242-1332-2
1242-1332-1

Kategorie

/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/GeneSiC Semiconductor GC10MPS12-252

Dokumente und Medien

Datasheets
1(GC10MPS12-252)
Featured Product
1(Silicon Carbide Schottky Diode)
PCN Obsolescence/ EOL
1(OBS 14/Jun/2023)

Menge Preis

-

Stellvertreter

Teil Nr. : GD10MPS12E
Hersteller. : GeneSiC Semiconductor
Verfügbare Menge. : 2,549
Einzelpreis. : $3.58000
Ersatztyp. : MFR Recommended