Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FQD17N08LTM
BESCHREIBUNG
MOSFET N-CH 80V 12.9A TO252
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 12.9A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount DPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500

Technische Daten

Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
12.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
100mOhm @ 6.45A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.5 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
FQD17N08

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

FQD17N08LTMDKR
FQD17N08LTMCT
FQD17N08LTMTR
FQD17N08LTM-ND

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQD17N08LTM

Dokumente und Medien

Datasheets
1(FQD17N08L)
Environmental Information
()
PCN Design/Specification
()
PCN Assembly/Origin
1(Mult Dev 13/Aug/2020)
PCN Packaging
1(Mult Devices 24/Oct/2017)

Menge Preis

-

Stellvertreter

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