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ChinaSI7102DN-T1-E3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI7102DN-T1-E3
BESCHREIBUNG
MOSFET N-CH 12V 35A PPAK 1212-8
DETAILIERTE BESCHREIBUNG
N-Channel 12 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
3720 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 52W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SI7102
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI7102DN-T1-E3-ND
SI7102DN-T1-E3CT
SI7102DN-T1-E3DKR
SI7102DN-T1-E3TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI7102DN-T1-E3
Dokumente und Medien
Datasheets
1(SI7102DN)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SI7102DN)
Menge Preis
-
Stellvertreter
Teil Nr. : SISH410DN-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 7,190
Einzelpreis. : $1.04000
Ersatztyp. : Similar
Verfügbare Menge. : 7,190
Einzelpreis. : $1.04000
Ersatztyp. : Similar