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ChinaAPT33GF120B2RDQ2G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT33GF120B2RDQ2G
BESCHREIBUNG
IGBT 1200V 64A 357W TMAX
DETAILIERTE BESCHREIBUNG
IGBT NPT 1200 V 64 A 357 W Through Hole
HERSTELLER
Microchip Technology
STANDARD LEADTIME
38 Weeks
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Active
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
64 A
Current - Collector Pulsed (Icm)
75 A
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 25A
Power - Max
357 W
Switching Energy
1.315mJ (on), 1.515mJ (off)
Input Type
Standard
Gate Charge
170 nC
Td (on/off) @ 25°C
14ns/185ns
Test Condition
800V, 25A, 4.3Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Base Product Number
APT33GF120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APT33GF120B2RDQ2GMI-ND
APT33GF120B2RDQ2GMI
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microchip Technology APT33GF120B2RDQ2G
Dokumente und Medien
Datasheets
()
Environmental Information
()
PCN Assembly/Origin
1(APT1/2/3/4/5/6/8xx 22/Dec/2022)
HTML Datasheet
()
Product Drawings
1(T-MAX Front)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $14.7625
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $18.19
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-