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ChinaBC859CW/ZL115
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TEILNUMMER DES HERSTELLERS
BC859CW/ZL115
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 200 mW Surface Mount SC-70
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
200 mW
Frequency - Transition
100MHz
Operating Temperature
-65°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SC-70
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-BC859CW/ZL115
NEXNXPBC859CW/ZL115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BC859CW/ZL115
Dokumente und Medien
Datasheets
1(BC859W, BC860W)
HTML Datasheet
1(BC859W, BC860W)
Menge Preis
-
Stellvertreter
-