English
Spain
Rusia
Italy
ChinaR6015FNX
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
R6015FNX
BESCHREIBUNG
MOSFET N-CH 600V 15A TO-220FM
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 15A (Tc) 77W (Tc) Through Hole TO-220FM
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
R6015FNX Models
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
350mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1660 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
77W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack
Base Product Number
R6015
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor R6015FNX
Dokumente und Medien
Datasheets
1(R6015FNX)
Other Related Documents
()
Environmental Information
()
EDA Models
1(R6015FNX Models)
Simulation Models
1(R6015FNX Spice Model)
Reliability Documents
1(TO220FM MOS Reliability Test)
Product Drawings
1(TO-220FM, TO-220FN)
Menge Preis
-
Stellvertreter
-