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ChinaRF1S540
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RF1S540
BESCHREIBUNG
28A, 100V, 0.077 OHM, N-CHANNEL
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 28A (Tc) 150W (Tc) Through Hole TO-262 (I2PAK)
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
249
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-RF1S540
HARHARRF1S540
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RF1S540
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 249
Einzelpreis: $1.21
Verpackung: Bulk
MinMultiplikator: 249
Verpackung: Bulk
MinMultiplikator: 249
Stellvertreter
-