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ChinaMSCM20XM10T3XG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MSCM20XM10T3XG
BESCHREIBUNG
MOSFET 6N-CH 200V 108A SP3X
DETAILIERTE BESCHREIBUNG
Mosfet Array 200V 108A (Tc) 341W (Tc) Chassis Mount SP3X
HERSTELLER
Microchip Technology
STANDARD LEADTIME
39 Weeks
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
108A (Tc)
Rds On (Max) @ Id, Vgs
9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
161nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
10700pF @ 50V
Power - Max
341W (Tc)
Operating Temperature
-40°C ~ 125°C (Tc)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
SP3X
Base Product Number
MSCM20
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology MSCM20XM10T3XG
Dokumente und Medien
Datasheets
1(Power Discrete, Module Portfolio)
Environmental Information
()
Menge Preis
QUANTITÄT: 1
Einzelpreis: $270.02
Verpackung: Bulk
MinMultiplikator: 1
Verpackung: Bulk
MinMultiplikator: 1
Stellvertreter
-