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China2SB564-AZ
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TEILNUMMER DES HERSTELLERS
2SB564-AZ
BESCHREIBUNG
PNP SILICON TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 25 V 50 mA 1 W Through Hole
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
735
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
50 mA
Voltage - Collector Emitter Breakdown (Max)
25 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 2mA, 20mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 100mA, 1V
Power - Max
1 W
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
3-SSIP
Supplier Device Package
-
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
RENRNS2SB564-AZ
2156-2SB564-AZ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB564-AZ
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 735
Einzelpreis: $0.41
Verpackung: Bulk
MinMultiplikator: 735
Verpackung: Bulk
MinMultiplikator: 735
Stellvertreter
-