English
Spain
Rusia
Italy
ChinaIRL3402PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRL3402PBF
BESCHREIBUNG
MOSFET N-CH 20V 85A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 85A (Tc) 110W (Tc) Through Hole TO-220AB
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 7V
Rds On (Max) @ Id, Vgs
8mOhm @ 51A, 7V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001558674
*IRL3402PBF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL3402PBF
Dokumente und Medien
Datasheets
1(IRL3402)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRL3402 Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL3402)
Menge Preis
-
Stellvertreter
-