Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPP120N10S405AKSA1
BESCHREIBUNG
MOSFET N-CH 100V 120A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 120A (Tc) 190W (Tc) Through Hole PG-TO220-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs
91 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6540 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP120

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-IPP120N10S405AKSA1
448-IPP120N10S405AKSA1
IPP120N10S405AKSA1-ND
SP001102616

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP120N10S405AKSA1

Dokumente und Medien

Datasheets
1(IPx120N10S4-05)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Mult Dev Assembly Chg 4/Oct/2018)
HTML Datasheet
1(IPx120N10S4-05)

Menge Preis

QUANTITÄT: 7000
Einzelpreis: $1.78025
Verpackung: Tube
MinMultiplikator: 7000

Stellvertreter

Teil Nr. : IAUC100N10S5N040ATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 12,956
Einzelpreis. : $2.62000
Ersatztyp. : MFR Recommended