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ChinaIPI50R199CPXKSA1
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TEILNUMMER DES HERSTELLERS
IPI50R199CPXKSA1
BESCHREIBUNG
MOSFET N-CH 500V 17A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 17A (Tc) 139W (Tc) Through Hole PG-TO262-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI50R
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPI50R199CP-ND
2156-IPI50R199CPXKSA1-IT
INFINFIPI50R199CPXKSA1
IPI50R199CP
SP000523756
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI50R199CPXKSA1
Dokumente und Medien
Datasheets
1(IPI50R199CP)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Power Factor Correction)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPI50R199CP)
Simulation Models
1(CoolMOS™ Power MOSFET 500V C3 Spice Model)
Menge Preis
-
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