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ChinaFZ1200R12KE3NOSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FZ1200R12KE3NOSA1
BESCHREIBUNG
IGBT MODULE
DETAILIERTE BESCHREIBUNG
IGBT Module Single Switch 1200 V 1700 A 5600 W Chassis Mount
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
IGBT Type
-
Configuration
Single Switch
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
1700 A
Power - Max
5600 W
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 1.2kA
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
86 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFFZ1200R12KE3NOSA1
2156-FZ1200R12KE3NOSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies FZ1200R12KE3NOSA1
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $822.1
Verpackung: Bulk
MinMultiplikator: 1
Verpackung: Bulk
MinMultiplikator: 1
Stellvertreter
-