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ChinaIRL60S216
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRL60S216
BESCHREIBUNG
MOSFET N-CH 60V 195A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 195A (Tc) 375W (Tc) Surface Mount PG-TO263-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IRL60S216 Models
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®, StrongIRFET™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
255 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
15330 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRL60S216
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRL60S216CT
INFINFIRL60S216
SP001573906
2156-IRL60S216
IRL60S216DKR
IRL60S216TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL60S216
Dokumente und Medien
Datasheets
1(IRL60S(L)216)
Other Related Documents
1(Part Number Guide)
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PCN Packaging
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HTML Datasheet
1(IRL60S(L)216)
EDA Models
1(IRL60S216 Models)
Simulation Models
1(IRL60S_SL216 Spice Model)
Menge Preis
-
Stellvertreter
Teil Nr. : IPB019N06L3GATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 7,726
Einzelpreis. : $3.62000
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 7,726
Einzelpreis. : $3.62000
Ersatztyp. : MFR Recommended