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ChinaRJP65T54DPM-E0#T2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJP65T54DPM-E0#T2
BESCHREIBUNG
IGBT TRENCH TO-3FP
DETAILIERTE BESCHREIBUNG
IGBT Trench 650 V 60 A 63.5 W Through Hole TO-3PF
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
Trench
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
225 A
Vce(on) (Max) @ Vge, Ic
1.68V @ 15V, 30A
Power - Max
63.5 W
Switching Energy
330µJ (on), 760µJ (off)
Input Type
Standard
Gate Charge
72 nC
Td (on/off) @ 25°C
35ns/120ns
Test Condition
400V, 30A, 10Ohm, 15V
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3PFM, SC-93-3
Supplier Device Package
TO-3PF
Base Product Number
RJP65T54
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Renesas Electronics Corporation RJP65T54DPM-E0#T2
Dokumente und Medien
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
Menge Preis
-
Stellvertreter
Teil Nr. : RGW60TK65GVC11
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 110
Einzelpreis. : $5.62000
Ersatztyp. : Similar
Verfügbare Menge. : 110
Einzelpreis. : $5.62000
Ersatztyp. : Similar