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ChinaNSVBC114EPDXV6T1G
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TEILNUMMER DES HERSTELLERS
NSVBC114EPDXV6T1G
BESCHREIBUNG
TRANS PREBIAS NPN/PNP 50V SOT563
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Last Time Buy
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
500mW
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-563
Base Product Number
NSVBC114
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-NSVBC114EPDXV6T1G-OS
2832-NSVBC114EPDXV6T1GTR
ONSONSNSVBC114EPDXV6T1G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi NSVBC114EPDXV6T1G
Dokumente und Medien
Datasheets
1(MUN5311DW1, NSBC114EPXxx)
Environmental Information
()
PCN Design/Specification
1(Carrier Tape 22/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Assembly Chgs 3/Jul/2020)
PCN Packaging
1(Mult Devices 27/Oct/2017)
HTML Datasheet
1(MUN5311DW1, NSBC114EPXxx)
Menge Preis
-
Stellvertreter
Teil Nr. : EMD53T2R
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 7,980
Einzelpreis. : $0.46000
Ersatztyp. : Similar
Verfügbare Menge. : 7,980
Einzelpreis. : $0.46000
Ersatztyp. : Similar