Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
13A, 30A
Rds On (Max) @ Id, Vgs
8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1765pF @ 15V
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
Power56
Base Product Number
FDMS3660