Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
BCX5516E6327HTSA1
BESCHREIBUNG
TRANS NPN 60V 1A SOT89-4
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 60 V 1 A 100MHz 2 W Surface Mount PG-SOT89-4-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 2V
Power - Max
2 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
PG-SOT89-4-2

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075

Andere Namen

INFINFBCX5516E6327HTSA1
2156-BCX5516E6327HTSA1

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Infineon Technologies BCX5516E6327HTSA1

Dokumente und Medien

Datasheets
1(BCX5516H6327XTSA1)

Menge Preis

QUANTITÄT: 3463
Einzelpreis: $0.09
Verpackung: Bulk
MinMultiplikator: 3463

Stellvertreter

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