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ChinaIPD60R600CP
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPD60R600CP
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 6.1A (Tc) 60W (Tc) Surface Mount PG-TO252-3-313
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
452
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™ CP
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-313
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD60R
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IFEINFIPD60R600CP
2156-IPD60R600CP
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD60R600CP
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 452
Einzelpreis: $0.66
Verpackung: Bulk
MinMultiplikator: 452
Verpackung: Bulk
MinMultiplikator: 452
Stellvertreter
-