Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPW65R045C7FKSA1
BESCHREIBUNG
MOSFET N-CH 650V 46A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 46A (Tc) 227W (Tc) Through Hole PG-TO247-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
STANDARDPAKET
30

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™ C7
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
45mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id
4V @ 1.25mA
Gate Charge (Qg) (Max) @ Vgs
93 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4340 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-1
Package / Case
TO-247-3
Base Product Number
IPW65R045

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-IPW65R045C7FKSA1
SP000929412
INFINFIPW65R045C7FKSA1

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPW65R045C7FKSA1

Dokumente und Medien

Datasheets
1(IPW65R045C7)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPW65R045C7)
Simulation Models
1(CoolMOS™ Power MOSFET 650V C7 Spice Model)

Menge Preis

QUANTITÄT: 1020
Einzelpreis: $7.39352
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 510
Einzelpreis: $8.06061
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $8.8945
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $9.45033
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $11.67
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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