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ChinaAPT20SCD65K
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT20SCD65K
BESCHREIBUNG
DIODE SIL CARB 650V 32A TO220
DETAILIERTE BESCHREIBUNG
Diode 650 V 32A Through Hole TO-220-2
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
32A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 20 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
400 µA @ 650 V
Capacitance @ Vr, F
680pF @ 100mV, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2
Operating Temperature - Junction
-55°C ~ 150°C
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
150-APT20SCD65K
APT20SCD65K-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Microsemi Corporation APT20SCD65K
Dokumente und Medien
Datasheets
1(APT20SCD65K)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 16/Oct/2017)
Menge Preis
-
Stellvertreter
-