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ChinaSTU10N60M2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STU10N60M2
BESCHREIBUNG
MOSFET N-CH 600V 7.5A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 7.5A (Tc) 85W (Tc) Through Hole TO-251 (IPAK)
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STU10N60M2 Models
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™ II Plus
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13.5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
-
Base Product Number
STU10N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-1138-STU10N60M2
497-13977-5
STU10N60M2-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STU10N60M2
Dokumente und Medien
Datasheets
1(STx10N60M2)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
Featured Product
1(MDmesh II Plus™ Low Qg Power MOSFETs)
PCN Obsolescence/ EOL
1(Mult Dev OBS 3/Jul/2020)
EDA Models
1(STU10N60M2 Models)
Menge Preis
QUANTITÄT: 10
Einzelpreis: $1.323
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $1.62
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-